Toshiba has introduced six 600V power mosfets in its four-pin TO-247-4L(X) package, which has a notch between drain and source pins to increase creepage distance. A kelvin source connection is ... The post 600V mosfets from Toshiba appeared first on Electronics Weekly.| Electronics Weekly
Onsemi has announced vertical GaN power devices, which it said are with early access customers in 700V and 1,200V form. “Developed and manufactured at Onsemi’s fab in Syracuse, New York, ... The post Onsemi announces vertical GaN power transitors appeared first on Electronics Weekly.| Electronics Weekly