A new technical paper titled “In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips” was published by researchers at ETH Zürich and CISPA. Abstract “In this work, we experimentally demonstrate that it is possible to generate true random numbers at high throughput and low latency in commercial off-the-shelf... » read more The post In-DRAM TRNG Using Simultaneous Multiple-Row Activation (ETH Zurich, CISPA) appeared fir...| Semiconductor Engineering
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