At VLSI 2018, researchers from TDK and TSMC described advances in Magneto-resistive memory (MRAM). TDK focused on new materials to improve writing for low-voltage MRAM cells at small geometries. A team from TSMC showcased circuit techniques to improve read performance of MRAM arrays despite process variability and a small read window. The post MRAM Research at VLSI 2018 appeared first on Real World Tech.| Real World Tech
IBM presented a neural network accelerator at VLSI 2018 showcasing a variety of architectural techniques for machine learning, including a regular 2D array of small processing elements optimized for dataflow computation, reduced precision arithmetic, and explicitly addressed memories. The post IBM’s Machine Learning Accelerator at VLSI 2018 appeared first on Real World Tech.| Real World Tech
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The Intel 4 process achieves 20% better performance and scales logic density by 2X while reducing costs through extensive design co-optimization, adoption of new materials, and judicious use of EUV lithography. The first product, the Meteor Lake compute tile, will ramp to high volume manufacturing in 2023.| Real World Tech