Forksheet FETs are currently in development for 2nm. They fall under the gate-all-around category. In forksheet FETs, both nFET and pFET are integrated in the same structure. A dielectric wall separates the nFET and pFET. This is different from existing gate-all-around FETs, which use different devices for the nFETs and pFETs. Forksheet FETs allow for... » read more
