A new technical paper titled “Comprehensive device to system co-design for SOT-MRAM at the 7nm node” was published by researchers at Georgia Institute of Technology and Intel. Abstract “This work presents a comprehensive spin-orbit torque (SOT) based random access memory (MRAM) design at the 7nm technology node, spanning from device-level characteristics to system-level power performance... » read more The post SOT-Based MRAM Design At 7nm (Georgia Tech, Intel) appeared first on Semico...
