3.5D: The Great Compromise
Pros and cons of a middle-ground chiplet assembly that combines 2.5D and 3D-IC.| Semiconductor Engineering
Pros and cons of a middle-ground chiplet assembly that combines 2.5D and 3D-IC.| Semiconductor Engineering
Discrete unpackaged die that can be assembled into a package with other chiplets; each chiplet is optimized to its function.| Semiconductor Engineering
High-bandwidth memory (HBM) is standardized stacked memory technology that provides very wide channels for data, both within the stack and between the memory and logic. An HBM stack can contain up to eight DRAM modules, which are connected by two channels per module. Current implementations include up to four chips, which is roughly the equivalent... » read more| Semiconductor Engineering
Slated for 2.5nm and beyond, complementary FET (CFET) is a more complex version of a gate-all-around device. Traditional gate-all-around FETs stack several p-type wires on top of each other. In a separate device, the transistor stacks n-type wires on each other. In CFETs, the idea is to stack both nFET and pFET wires on each... » read more| Semiconductor Engineering
